Accurate Temperature Measurement for Renewable Energy Applications: A Reverse Biased Silicon Diode Temperature Sensor Approach
O.A. Abdulkhaev, D.B. Istamov, A.R. Abdulkhaeva, Sh.M. Kuliyev, D.M. Yodgorova and A.Z. Rakhmatov    Physical-technical institute, Uzbekistan Academy of Sciences, Chingiz Aytmatov, 2B, 100084, Tashkent, (Uzbekistan)   2025-07-25

Abstract

A novel silicon diode temperature sensor (DTS) incorporating a fully depleted base region has been developed specifically for applications in renewable energy. The sensor employs the voltage across the fully depleted base as the principal parameter for temperature measurement. Upon application of a defined reverse bias (Uo), complete depletion of the base region of the silicon diode is achieved. This condition ensures that the measurement potential, derived from the increasing operational voltage, remains stable and varies solely in response to changes in temperature. Comprehensive characterization of the temperature response curve (TRC) from 93 K to 300 K revealed a high degree of linearity with a sensitivity of +2.26 mV/K. However, it is important to clarify that DTS is capable of operating effectively over a much broader range from 70 K to 500 K. To our knowledge, this study documents the first occurrence of a linear TRC in a reverse-biased diode temperature sensor, which could significantly improve the operational efficiency and reliability of renewable energy systems under a range of harsh and fluctuating environmental conditions.

Key words: Silicon, diode temperature sensor, reverse-biased diode, renewable energy applications, temperature response curve, sensitivity.

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