High Performance SiC MOSFETs for Fault Tolerant Applications C. Onambele, A. Mpanda, F. Giacchetti and M. Elsied   2017/04/25

Abstrac

Harsh environment applications are characterized by exceptional constraints regarding temperature, volume, fault-tolerance, efficiency, etc. As the introduction of power electronics in such systems is constantly growing, research activities are essential to get more knowledge on the capabilities of available technologies for such applications: aerospace and renewable energies. This paper evaluates the performance of a Silicon Carbide (SiC) MOSFET transistor for a multiphase power converter for fault-tolerant applications. Two methods are carried out in this study: first, the model provided by the manufacturer is used in simulation for a fault-tolerant electric drive application, then in the same operating conditions, the power module is characterized and its performance evaluated. Both methods lead to high system efficiency around 97-98% for a 1200V-400A SiC MOSFET transistor module integrated in a 120kW-100A 6-phase modular inverter.

Authors and affiliations

C. Onambele(1,2), A. Mpanda(2), F. Giacchetti(1) and M. Elsied(2)
1. Modeling, Information & Systems Lab (MIS). University of Picardie Jules Verne (UPJV). Amiens, France
2. Graduate School of Electronic and Electrical Engineering (ESIEE-Amiens). Amiens, France

Key word

High efficiency, fault-tolerant applications, modular inverter, SiC power MOSFET module, switching characterization.

References

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