Modeling of a New Super-Gain BJT and an innovative Low-loss AC Switch based on Gummel-Poon model Z. Ren, P. Wang, A. Schellmanns, N. Batut and G. Goubard   2018/04/20

Abstract

This article gives a modeling method based on the Gummel-Poon model for the Super-Gain BJT developed in the GREMAN laboratory. First of all, the extraction principle, mathematical calculating method, and final extraction results of each model parameter will be presented. Secondly, the Gummel and Voltage-Current output curves for a single Super-Gain BJT, which are carried on in Pspice with the extracted parameters in the first part, will be drawn and be compared with experimentation results. At last, a new 600V AC switch that is composed of two single Super-Gain BJTs connected in anti-series is simulated. To explain and reduce the error between the simulated results and experimental ones in hi-level injection, a new model with a dynamic resistance based on that of Gummel-Poon is proposed and validated. Consequently, all of simulations have an error less than 10%, proving the good precision of the models as well as the characteristics of the new AC power switch.

Authors and affiliations

Z. Ren, P. Wang, A. Schellmanns, N. Batut and G. Goubard
University of Tours, GREMAN UMR-CNRS,Tours (France)

Key words

600V AC Switch, electrical modeling, Gummel-Poon model, Super-Gain BJT, SPICE simulation.

References

[1] C. Benboujema, S. Jacques, A. Schellmanns, N. Batut, J.-B. Quoirin, L. Jaouen, L. Ventura, Characterization of a high gain BJT used in power conversion on AC mains, Proceedings of the IEEE Energy Conversion Congress and Exposition, 2010, pp. 357-361.
[2] Rectifier and controller including triac switch. U.S. Patent No 3,421,063, 7 janv. 1969.
[3] Hefner, A. R. (1990, June). An investigation of the drive circuit requirements for the power insulated gate bipolar transistor (IGBT). In Power Electronics Specialists Conference, 1990. PESC'90 Record., 21st Annual IEEE (pp. 126-137). IEEE.
[4] Lundstrom, M. (1997). Elementary scattering theory of the Si MOSFET. IEEE Electron Device Letters, 18(7), 361-363.
[5] Holtz, J., Lammert, P., & Lotzkat, W. (1987). High-speed drive system with ultrasonic MOSFET PWM inverter and single-chip microprocessor control. IEEE transactions on industry applications, (6), 1010-1015.
[6] REN Zheng, SCHELLMANNS Ambroise, BATUT Nathalie, “Development and Static Mode Characterization of a New Low-loss AC Switch Based on Super-Gain BJT”, Special issue published in Journal of Energy and Power Engineering in January 2014.
[7] L.-V. Phung, Chawki Benboujema, Jean-Baptise Quoirin, BATUT Nathalie, Modeling of a new SOI bidirectional bipolar junction transistor for low-loss household appliances, IEEE Transactions on Electron Devices, Vol. 58, No 4, 2011, pp. 1164-1169.
[8] REN Zheng, SCHELLMANNS Ambroise, BATUT Nathalie. Dynamic Mode Characterization of a New Super-Gain BJT and an Innovative Low-Loss AC Switch. In: 2016 IEEE Workshop on Microelectronics and Electron Devices (WMED). IEEE, 2016. p. 1-4.
[9] Franz Sischka, “Gummel-Poon Bipolar Model, model description and parameter extraction”, Agilent Technologies GmbH, 2006, Munich (Germany).