A 380 V High Efficiency and High Power Density Switched-Capacitor Power Converter using Wide Band Gap Semiconductors L. Fan, A. Knott and I. Jørgensen 2018/04/20

Abstract

State-of-the-art switched-capacitor DC-DC power converters mainly focus on low voltage and/or high power applications. However, at high voltage and low power levels, new designs are anticipated to emerge and a power converter that has both high efficiency and high power density is highly
desirable. This paper presents such a high voltage low power switched-capacitor DC-DC converter with an input voltage up to 380 V (compatible with rectified European mains) and an output power experimentally validated up to 21.3 W. The wide band gap semiconductor devices of GaN switches and SiC diodes are combined to compose the proposed power stage. Their switching and loss characteristics are analyzed with transient waveforms and thermal images. Different isolated
driving circuits are compared and a compact isolated halfbridge driving circuit is proposed. The full-load efficiencies of 98.3% and 97.6% are achieved for the power stage and the complete power converter, without heatsink or airflow. The corresponding power densities are 7.9 W/cm3 and 2.7 W/cm3, based on boxed volumes, respectively.

Authors and affiliations

L. Fan1, A. Knott1 and I. Jørgensen1
1. Department of Electrical Engineering. Technical University of Denmark. Lyngby (Denmark)

Key words

Switched capacitor circuits, DC-DC power converters, Gallium nitride, Silicon carbide, Wide band gap, semiconductors.

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