Simulated 1200V SiC-MOSFET short-circuit behavior G. Goubard, Z. Ren, N. Batut and A. Schellmanns   2018/04/20

Abstract

This paper presents experimental measurements and simulated results of Silicon Carbide (SiC) MOSFETs on short-circuit operations. The main objective is to validate power transistor TCAD model, and its reliability to be representative of real components behavior (from static and dynamic
characterization, to failure mechanisms). SENTAURUS simulation software could allow us to define not only 1200V SiC MOSFET itself but also other electronics components to develop a complex driving circuit. Results of simulation will help us to understand short-circuit effect on the component structure.

Authors and affiliations

G. Goubard, Z. Ren, N. Batut and A. Schellmanns
University of Tours (France), GREMAN CNRS UMR 7347 INSA CVL. Tours (France)

Key words

1200V SiC MOSFET, short-circuit, device simulation, failure mechanisms

References

[1] L. Hong, “Market and Technology trends in WBG power module packaging”, in Proc. Yole Development, PCIM,
Asia, 2015.
[2] C. Chen, D. Labrousse, S. Lefebvre, “Robustness of SiC MOSFETs in short-circuit mode” in Proc. PCIM 2015,
Nuremberg, Germany, May 2015.
[3] T. Nguyen, A. Ahmed, T. V. Thang, J. Park, “Gate Oxide Reliability Issues of SiC MOSFETs Under Short-Circuit
Operation”, IEEE Transactions on Power Electronics, May 2015, Vol. 30, pp. 2445-2455
[4] http://www.wolfspeed.com/c2m0080120d
[5] W. Shih, “Device Simulation of Density of Interface States of Temperature Dependent Carrier Concentration in 4H-SiC
MOSFETs”, Auburn University, Alabama, August 2014.
[6] G. Romano, L. Maresca, M. Riccio, V. d’Alessandro, G. Breglio, A. Irace, “Short-circuit Failure Mechanism of SiC
Power MOSFETs”, in Proc. ISPSD 2015, Kowloon Shangri-La, Hong Kong, May 2015.